IEEE Spectrum April 6, 2018
A team of researchers in the US (Wake Forest School of Medicine, UCLA, Virginia Tech, University of South Carolina) recorded the brain activity associated with the storage of specific information, mathematically modeled and decoded that activity, and then wrote the code back into brain to make existing memory work better. With the electrical boost, volunteers’ memory performance improved by 35 percent. The research is one of several approaches that could one day lead to “brain prostheses” to fill in for lost memory. The study was funded by DARPA through its Restoring Active Memory, or RAM program. DARPA has been challenging neuroscientists to develop an implantable device that can mitigate memory loss in vets with traumatic brain injury…read more. TECHNICAL ARTICLE 1, Open Access TECHNICAL ARTICLE 2