Physorg February 12, 2018
Bipolar effect of resistive switching (BERS) can be used for developing nonvolatile two-terminal memory cells, as well as for memristors. Researchers in Russia have shown that epitaxial fields that form on the surface of a single-crystalline substrate of strontium titanate can be used to create memristors for a new generation of computers. The innovation in this research is in applying the lithography which allows developing the technology for miniaturization of resistive memory elements…read more. TECHNICAL ARTICLE
Scientists test new material for neurocomputers
Posted in Materials science and tagged Materials science, Membrane computing, Neurocomputers, Neurocomputing.