EurekAlert  May 11, 2020 Using a room temperature grown locking layer and precise control over the entire fabrication process, a team of researchers in the US (NIST, University of Maryland) reduced unintentional dopant movement while achieving high quality epitaxy in scanning tunneling microscope (STM)-patterned devices. They demonstrated the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows, the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the […]