Science Daily January 25, 2019 An international team of researchers (Singapore, China) has developed a cheaper and more scalable bottom-up synthesis strategy that can consistently construct TMD QDs (transition metal dichalcogenide quantum dots) of a specific size and properties. To demonstrate the proof-of-concept they synthesised MoS2 QDs with specific properties for biomedical applications. They have successfully synthesised a small library of seven TMD QDs and were able to alter their electronic and optical properties accordingly. They process can be used to optimize TMD QDs for applications such as the next generation TV and electronic device screens, advanced electronics components and […]
Tag Archives: Quantum dots
Researchers demonstrate teleportation using on-demand photons from quantum dots
Phys.org December 17, 2018 Despite recent advances, the exploitation of deterministic quantum light sources in push-button quantum teleportation schemes remains a major open challenge. An international team of researchers (Austria, Italy, Sweden) has shown that photon pairs generated on demand by a GaAs quantum dot can be used to implement a teleportation protocol whose fidelity violates the classical limit (by more than 5 SDs) for arbitrary input states. They developed a theoretical framework that matches the experimental observations and that defines the degree of entanglement and indistinguishability needed to overcome the classical limit independently of the input state. The results […]
Quantum dot floating gates improve light-erasable memories
Physics World August 3, 2018 Researchers in South Korea have significantly improved the performance of photoresponsive flash memories made from OFETs by making use of floating gates based on cadmium selenide quantum dots whose surfaces have been modified. They found that modifying the surfaces of the dots affected the performance of the memories and found that capping small ligands of octadecylphosphonic and fluorinated molecules improved the diffusion of holes between the dots and the conducting channels in the devices. The new devices have memory ratios of over 105 between OFF and ON bi-stable current states for over 10,000 seconds and […]