Physics World August 3, 2018
Researchers in South Korea have significantly improved the performance of photoresponsive flash memories made from OFETs by making use of floating gates based on cadmium selenide quantum dots whose surfaces have been modified. They found that modifying the surfaces of the dots affected the performance of the memories and found that capping small ligands of octadecylphosphonic and fluorinated molecules improved the diffusion of holes between the dots and the conducting channels in the devices. The new devices have memory ratios of over 105 between OFF and ON bi-stable current states for over 10,000 seconds and good dynamic switching behaviour… read more.
TECHNICAL ARTICLE
The OFET memory device