Nanowerk November 9, 2022 Eliminating the etching process by directly fabricating nanowires onto the silicon substrate would lead to a marked improvement in the fabrication of spintronic devices. However, when directly fabricated nanowires are subjected to annealing, they tend to transform into droplets as a result of the internal stresses in the wire. Researchers in Japan have developed a new fabrication process to make L10-ordered CoPt nanowires on silicon/silicon dioxide (Si/SiO2) substrates. They coated a Si/SiO2 substrate with a material called a ‘resist’ and subjected it to electron beam lithography and evaporation to create a stencil for the nanowires, deposited […]
Tag Archives: Nanowires
Quantum one-way street in topological insulator nanowires
Phys.org May 12, 2022 Recently quantum mechanical non-reciprocal transport effects that enable a highly controllable rectification were discovered. One such effect is magnetochiral anisotropy (MCA) in which the resistance of a material or a device depends on both the direction of the current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small because MCA relies on inversion symmetry breaking that leads to the manifestation of spin–orbit coupling, which is a relativistic effect. To overcome this limitation, an international team of researchers (Switzerland, Germany, Belgium) artificially broke the inversion symmetry via […]
Researchers develop the world’s first power-free frequency tuner using nanomaterials
Science Daily March 18, 2022 Phase-change materials (PCMs) can switch between amorphous and crystalline states permanently yet reversibly. However, the change in their mechanical properties has largely gone unexploited. The most practical configuration using suspended thin-films suffer from filamentation and melt-quenching. An international team of researchers (UK, USA – University of Pennsylvania) used nanowires as active nanoelectromechanical systems (NEMS) to overcome these limitations. They achieved active modulation of the Young’s modulus in GeTe nanowires by exploiting a unique dislocation-based route for amorphization. The nanowire NEMS enable power-free tuning of the resonance frequency over a range of 30% and their high […]
Nanowires under tension create the basis for ultrafast transistors
Phys.org February 7, 2022 Researchers in Germany produced nanowires consisting of a gallium arsenide core and an indium aluminum arsenide shell. The different chemical ingredients resulted in the crystal structures in the shell and the core having slightly different lattice spacings. This causes the shell to exert a high mechanical strain on the much thinner core changing the electronic properties of gallium arsenide in the core. They demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. The electrons inside core of nanowires exhibited mobility […]
Atomic-scale nanowires can now be produced at scale
Phys.org December 24, 2020 Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. To mass produce TMC researchers in Japan have demonstrated a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires by chemical vapor deposition. The technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed […]