Phys.org  January 13, 2021 Low-dimensional materials can have a relatively small number of free charges and weak screening compared to 3-D materials. This screening is especially crucial for the development of tunnel field-effect transistors, which heavily rely on the quantum tunneling of electrons across junctions. By atomistic quantum transport simulations researchers in Canada show how bound charges can be engineered at interfaces of Si and low- oxides to strengthen screening. To avoid compromising gate control, low- and high- oxides are used in conjunction. They demonstrated that in Si nanowire tunnel field-effect transistors bound charge engineering increases the on-state current by […]