MIT News  April 27, 2023 Semiconductor chips are traditionally made with bulk materials, which are boxy 3D structures, so stacking multiple layers of transistors to create denser integrations is very difficult. Semiconductor transistors made from ultrathin 2D materials, each only about three atoms in thickness, could be stacked up to create more powerful chips. Using a low-temperature growth process that does not damage the chip, an international team of researchers (USA – MIT, Oak Ridge National Laboratory, Sweden) has demonstrated a novel technology that can effectively and efficiently “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top […]