MIT News December 18, 2024 Although monolithic 3D (M3D) integration schemes show promise, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. An international team of researchers (USA – MIT, Korea) present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures low enough to preserve the underlying electronic components. They demonstrated the seamless monolithic integration of vertical single-crystalline logic transistor arrays leading to the development of vertical CMOS arrays composed of grown single-crystalline channels. According to researchers their work provides opportunities for M3D integration […]
Tag Archives: Monolithic 3D integration
MIT engineers “grow” atomically thin transistors on top of computer chips
MIT News April 27, 2023 Semiconductor chips are traditionally made with bulk materials, which are boxy 3D structures, so stacking multiple layers of transistors to create denser integrations is very difficult. Semiconductor transistors made from ultrathin 2D materials, each only about three atoms in thickness, could be stacked up to create more powerful chips. Using a low-temperature growth process that does not damage the chip, an international team of researchers (USA – MIT, Oak Ridge National Laboratory, Sweden) has demonstrated a novel technology that can effectively and efficiently “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top […]