EurekAlert  June 11, 2022 Researchers in Japan have developed a proof-of-concept 3D stacked memory cell based on ferroelectric and antiferroelectric FETs with atomic-layer-deposited oxide semiconductor channel. The vertical device structure increases information density and reduces operation energy needs. Hafnium oxide and indium oxide layers were deposited in a vertical trench structure. By using antiferroelectric instead of ferroelectric, they found that only a tiny net charge was required to erase data, which leads to more efficient write operations. This work may allow for new even smaller and more eco-friendly data-storage memory. The team experimented with various thicknesses for the indium oxide […]