A multi-level breakthrough in optical computing—a faster, more efficient, and robust memory cell

Phys.org  October 23, 2024 A typical approach to photonic processing is to multiply a rapidly changing optical input vector with a matrix of fixed optical weights. However, encoding these weights on-chip using an array of photonic memory cells is currently limited by a wide range of material- and device-level issues, such as the programming speed, extinction ratio and endurance, among others. An international team of researchers (USA – UC Santa Barbara, University of Pittsburg, Italy, Japan) proposed a new approach to encoding optical weights for in-memory photonic computing using magneto-optic memory cells comprising heterogeneously integrated cerium-substituted yttrium iron garnet (Ce:YIG) […]

Building up new data-storage memory

EurekAlert  June 11, 2022 Researchers in Japan have developed a proof-of-concept 3D stacked memory cell based on ferroelectric and antiferroelectric FETs with atomic-layer-deposited oxide semiconductor channel. The vertical device structure increases information density and reduces operation energy needs. Hafnium oxide and indium oxide layers were deposited in a vertical trench structure. By using antiferroelectric instead of ferroelectric, they found that only a tiny net charge was required to erase data, which leads to more efficient write operations. This work may allow for new even smaller and more eco-friendly data-storage memory. The team experimented with various thicknesses for the indium oxide […]