Physorg  February 12, 2018 Bipolar effect of resistive switching (BERS) can be used for developing nonvolatile two-terminal memory cells, as well as for memristors. Researchers in Russia have shown that epitaxial fields that form on the surface of a single-crystalline substrate of strontium titanate can be used to create memristors for a new generation of computers. The innovation in this research is in applying the lithography which allows developing the technology for miniaturization of resistive memory elements…read more. TECHNICAL ARTICLE