Nanowerk April 3, 2022 Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway towards achieving quantum anomalous Hall (QAH) effect at higher temperatures for lossless transport applications. An international team of researchers (Australia, Singapore, USA – UC Berkeley) demonstrated the growth of a MnBi2Te4 / Bi2Te3 /MnBi2Te4 heterostructure via molecular beam epitaxy and probed the structure’s electronic structure using angle resolved photoelectron spectroscopy. They observed strong hexagonally warped massive Dirac fermions and a bandgap of 75 ± 15 meV. The 2D MnBi2Te4 ferromagnets induced magnetic order in the ultra-thin topological insulator Bi2Te3 via […]
Tag Archives: Insulator
Researchers find potential solution to overheating mobile phones
Phys.org November 29, 2019 Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. An international team of researchers (Singapore, South Korea) has experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices…read more. TECHNICAL ARTICLE