Phys.org November 29, 2019
Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. An international team of researchers (Singapore, South Korea) has experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices…read more. TECHNICAL ARTICLEÂ
Future magnon torque based devices such as this could allow for faster electronic gadgets that require less power and do not overheat. Credit: National University of Singapore.