Nanowerk  April 28, 2023 The continued downscaling of silicon CMOS technology presents challenges for achieving the required low power consumption. While high mobility channel materials hold promise for improved device performance at low power levels, a material system which enables both high mobility n-FETs and p-FETs, that is compatible with Si technology and can be readily integrated into existing fabrication lines is required. An international team of researchers (Germany, France, UK) has developed high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transconductance was increased to 850 µS/µm by exploiting the small band […]