Nanowerk October 16, 2023 Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. Researchers in Germany demonstrated the ferroelectric switching characteristics of sub-5 nm thin Al0.74Sc0.26N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. They focused on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which was in a range that could be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of ultrathin Al1−xScxN films on epitaxial templates, a […]
Tag Archives: ferroelectrics
Chipmakers Test Ferroelectrics as a Route to Ultralow-Power Chips
IEEE Spectrum February 26, 2018 Researchers at a company in the US chose a ferroelectric material that does not require ions or atoms to relocate which slows things down in ferroelectric materials. In their experimental 14-nm transistors, clouds of electrons around silicon-doped hafnium dioxide experience the polarization. Ring oscillators made with these transistors can switch at the same frequency as those made with the usual recipe, yet they require just 54 mV to achieve a tenfold increase in the current. Their devices require a 3- to 8-nm-thick layer of ferroelectric material, which is still relatively thick… read more. Related TECHNICAL […]