MIT News July 26, 2024 Ferroelectric materials change polarization in response to an electric field and are useful for memory. However, these materials often suffer from fatigue as they are cycled many times, capping their lifetime. An international team of researchers (USA – MIT, Harvard, Japan) investigated the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin 2D ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. They examined the FeFET device employing monolayer graphene as the channel layer, […]
Tag Archives: ferroelectrics
Tiny memory cell withstands extreme temperatures
Nanowerk October 16, 2023 Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. Researchers in Germany demonstrated the ferroelectric switching characteristics of sub-5 nm thin Al0.74Sc0.26N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. They focused on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which was in a range that could be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of ultrathin Al1−xScxN films on epitaxial templates, a […]
Chipmakers Test Ferroelectrics as a Route to Ultralow-Power Chips
IEEE Spectrum February 26, 2018 Researchers at a company in the US chose a ferroelectric material that does not require ions or atoms to relocate which slows things down in ferroelectric materials. In their experimental 14-nm transistors, clouds of electrons around silicon-doped hafnium dioxide experience the polarization. Ring oscillators made with these transistors can switch at the same frequency as those made with the usual recipe, yet they require just 54 mV to achieve a tenfold increase in the current. Their devices require a 3- to 8-nm-thick layer of ferroelectric material, which is still relatively thick… read more. Related TECHNICAL […]