MIT News December 18, 2024
Although monolithic 3D (M3D) integration schemes show promise, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. An international team of researchers (USA – MIT, Korea) present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures low enough to preserve the underlying electronic components. They demonstrated the seamless monolithic integration of vertical single-crystalline logic transistor arrays leading to the development of vertical CMOS arrays composed of grown single-crystalline channels. According to researchers their work provides opportunities for M3D integration of various electronic hardware in the form of single crystals… read more. TECHNICAL ARTICLE
Schematic for progress of 3D integration. Credit: Nature volume 636, pages 615–621 (2024)