Phys.org June 28, 2024
To produce 75 °C continuous-wave operation research in South Korea investigated InAs/GaAs quantum dot laser diodes (QDLDs) on a GaAs substrate grown by utilizing all-metalorganic chemical vapor deposition technology with a p-AlGaAs cladding layer. The InAs quantum dots (QDs) in a dot-in-a-well (DWELL) structure formed by engineering the strained bottom InGaAs layer were successfully grown without detectable clusters, making it possible to increase the number of DWELL stacks effectively. The results of electron-channeling contrast imaging revealed that dislocations in the p-cladding layer were generated due to the accumulative strain of the DWELL and low-temperature growth. The fabricated InAs/GaAs QDLDs showed good electrical and optical characteristics with O-band emission wavelength without high-reflection coating. According to the researchers their approach is a promising option for future Si-photonic light source components… read more. TECHNICAL ARTICLEÂ
Graphical Abstract. Credit: Journal of Alloys and Compounds, Volume 983, 5 May 2024, 173823