Science Daily July 3, 2023
Researchers in Sweden have demonstrated the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. Based on the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects were sensed without physical gate-length scaling required for conventional transistors. They electrically measured abrupt threshold voltage shifts and quantified the appearance of new individual defects activated by the ferroelectric switching. According to the researchers their results show that ferroelectric films can be integrated on heterostructure devices and indicated that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Their approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics… read more. Open Access TECHNICAL ARTICLE 1 , 2 ,
Device structure of the vertical nanowire ferro-TFET… Credit: SCIENCE ADVANCES, 3 Feb 2023, Vol 9, Issue 5