Closing in on next-generation atom-thick photonic devices

Phys.org  March 13, 2023
The materials used to make photodetectors often hamper efforts to make improved broadband nanoscale photodetectors. To overcome these difficuties a team of researchers in the US (San Francisco State University, Stanford University) developed a photodetector that has improved sensitivity in the ultraviolet to near-infrared light range. High photoresponsivity at wavelength 400 nm measured at 77 K, which translates into an external quantum efficiency. The 90% rise time of the devices at 77 K is 0.1 ms, suggesting they can operate at the speed of ≈10 kHz. High-performance broadband photodetector with spectral coverage ranging from 380 to 1000 nm was demonstrated. According to the researchers the combination of large-array device fabrication, high sensitivity, and high-speed response offers great potential for applications in photonics, including integrated optoelectronic circuits… read more. Open Access TECHNICAL ARTICLE 

Device characteristics… Credit: Advanced Photonics Research, March 2, 2023 

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