Optimizing silicon structure to reduce reflection

Nanowerk  April 14, 2022
Researchers in China examined changes in the porous structure of silicon to make it less reflective and thus a better material for solar absorbing technology. Currently, the reflectivity of porous silicon prepared using electrochemical methods is around 5 to 10 per cent, with the lowest reflectivity being 4.7 per cent for light in the wavelength range of 300 to 1000 nanometres. They calculated and compared the surface reflectivity of porous silicon structures with different pore sizes. They discovered that the porous silicon structure when prepared under the optimal corrosion parameters can achieve an average reflectivity as low as 2.3 per cent for light in the incident wavelength range of 300 to1000 nm. They found that pore sizes of 300 to 700 nm could achieve lower reflectivity…read more. TECHNICAL ARTICLE 

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