Phys.org January 19, 2022
The low conductivity of previous CuMO2 films obstructs the development of delafossite-based electronics. Researchers in China designed and fabricated a new p-type 4d transition metal Rh-based CuRhO2 film by a facile solution method. It has room-temperature conductivity as high as 735 S cm−1 which was achieved by substituting 10%Mg in Rh sites. The acceptor-doped CuRhO2 films exhibited high near-infrared transmittance of 85–60% with low room-temperature sheet resistance of 4.28–0.18 kΩ sq−1. The electronic structure, electrical transport mechanism, and intra-band excitation feature for the CuRhO2 film are unveiled. According to the researchers theoretical and experimental results contribute to advances in p-type TC films and multifunctional opto-electronic devices…read more. TECHNICAL ARTICLE
Photo of p-type NIR TCCuRhO2 thin film with 2 inches size. Credit: Wei Renhuai