Nanowerk October 26, 2021
InGaN LEDs with considerably high indium concentrations remain difficult to manufacture using conventional semiconductor structures. An international team of researchers (Singapore, USA- MIT) leveraged the the formation of pyramids, the intrinsic defects in LED materials. V-pits, which result from naturally-existing dislocations in the material, directly forms indium-rich quantum dots that emit longer-wavelength light. By growing these structures on conventional silicon substrates, the need for patterning or unconventional substrates is further eliminated. The researchers demonstrated visual confirmation of their morphology. In addition to the formation of quantum dots, the nucleation of stacking faults – another intrinsic crystal defect – further contributes to emissions of longer wavelengths. The work could also have broader implications for the semiconductor and electronics industry…read more. TECHNICAL ARTICLEÂ
