Nanowerk October 11, 2021
A team of researchers in the US (NIST, Pennsylvania State University) concentrated on the boundary, or channel, between the thin oxide layer and the bulk semiconductor body which controls the resistance of the device from source to drain. They used electrically detected magnetic resonance (EDMR) to detect defects in the channel. To focus exclusively on activity in the channel, researchers use a technique called bipolar amplification effect (BAE). The parameter of importance is the interface defect density, which is a number that describes how many defects are within some area of the semiconductor-oxide interface. The BAE model gives researchers a mathematical description of how the BAE current is related to the defect density. The model tested in a set of proof-of-concept experiments makes quantitative measurements possible. The model presented here may ultimately prove useful in the development of resonance-based theories of BAE EDMR…read more. Open Access TECHNICAL ARTICLE
Illustration of the dc-IV biasing scheme showing the source and drain bias and gate bias . Credit: Journal of Applied Physics, Volume 130, Issue 13, 06 October 2021Â