Phys.org July 19, 2021
The spin color centers in silicon carbide, including silicon vacancies and divacancies have excellent optical and spin properties. Researchers in China have presented the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast (−30%) and a high photon count rate under ambient conditions, which are competitive with the nitrogen-vacancy centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. They provided a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is important in many applications of quantum technologies, this work lays the foundation for building room-temperature solid-state quantum storage and scalable solid-state quantum networks which are based on the SiC spin color center system…read more. TECHNICAL ARTICLE
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