Stretching diamond for next-generation microelectronics

Science Daily  December 31, 2020
An international team of researchers (Hong Kong, Taiwan, China, USA – UC Berkeley, Lawrence Berkeley National Laboratory, MIT) microfabricated single-crystalline diamond bridge structures with ~1 micrometer length by ~100 nanometer width and achieved sample-wide uniform elastic strains under uniaxial tensile loading at room temperature. They demonstrated deep elastic straining of diamond microbridge arrays. The ultra large, highly controllable elastic strains can fundamentally change the bulk band structures of diamond, including a substantial calculated bandgap reduction as much as ~2 electron volts. Their findings have shown the potential of strained diamonds as prime candidates for advanced functional devices in microelectronics, photonics, and quantum information technologies…read more. TECHNICAL ARTICLE

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