EurekAlert December 15, 2020
Researchers at the University of Maryland demonstrated theoretically and experimentally that properties of two-dimensional group-III nitride semiconductors can be controlled by alloying. They found that by changing the alloying concentration, the band gap and exciton binding energies of each structure can be tuned accordingly, and for certain concentrations, a high thermoelectric performance was reported with strong dependence on the effective mass of the given alloyed monolayer. In addition, they explained contribution of each electron–hole (e-h) pair by investigating the e–h coupling strength projected on the electronic band structure. They found that the exciton binding energy decreases with increase in sequential alloying concentration. With the ability to control such properties by alloying 2D group-III nitrides, they believe that this work will play a crucial role for experimentalists and manufacturers focusing on next-generation electronic, optoelectronic, and thermoelectric devices…read more. TECHNICAL ARTICLE
