Black silicon photodetector breaks the 100% efficiency limit

Phys.org  August 14, 2020
Ultraviolet sensors are utilized in numerous fields although their performance is surprisingly poor. An international team of researchers (Finland, Spain, Germany) used a nanostructured silicon photodiode with self-induced junction to demonstrate that it is possible to make a device with a certified external quantum efficiency above 130% in UV range without external amplification. They showed that the high efficiency is based on effective utilization of multiple carrier generation by impact ionization taking place in the nanostructures. While the results can readily have a significant impact on the UV-sensor industry, the underlying technological concept can be applied to other semiconductor materials, thereby extending above unity response to longer wavelengths and offering new perspectives for improving efficiencies beyond the Shockley-Queisser limit…read more. Open Access TECHNICAL ARTICLE

UV-light triggers electron multiplication in nanostructures. Credit: Wisa Förbom

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