EurekAlert July 9, 2020
When spintronic devices are used for storing data, the number of stable states sets an upper limit on memory capacity. Researchers in Israel have shown that relatively simple structures can support exponential number of magnetic states – much greater than previously thought. They studied structures that are magnetic thin films patterned in the form of N crossing ellipses which have two to the power of 2N magnetization states. The researchers demonstrated switching between the states by generating spin currents. The finding may pave the way to multi-level magnetic memory with extremely large number of states per cell which can be used for neuromorphic computing…read more. Open Access TECHNICAL ARTICLE