Phys.org March 10, 2020
An international team of researchers (Switzerland, Spain) present a method for reversible, light-induced tuning of ferromagnetism at room temperature using a halide perovskite/oxide perovskite heterostructure. They showed that photoinduced charge carriers from the CH3NH3PbI3 photovoltaic perovskite efficiently dope the thin La0.7Sr0.3MnO3 film and decrease the magnetization of the ferromagnetic state, allowing rapid rewriting of the magnetic bit. The method is still experimental, but it may be used to build the next generation of memory-storage systems, with higher capacities and with low energy demands. The research opens avenues for magnetooptical memory devices…read more. TECHNICAL ARTICLE
Credit: EPFL