Science Daily January 29, 2020
Indium selenide and gallium selenide are emerging two-dimensional semiconductors with appealing electronic properties. However, they are sensitive to air and device fabrication processes which induce structural damage and hamper their intrinsic properties. An international team of researchers (USA -Columbia University, Germany, Japan) has demonstrated an encapsulating technique where two layers of hBNhexagonal boron nitride (hBN) entirely covers the 2D layers of InSe and GaSe passivating them from the environment and isolating them from the charge disorder at the SiO2 surface. They demonstrated a strong and reproducible photo response and long-term stability. The technique can open ways for fundamental studies as well as toward the integration of these materials in technological applications…read more. TECHNICAL ARTICLE
Abstract. Credit: ACS Appl. Mater. Interfaces 2019, 11, 46, 43480-43487Â