Eurekalert December 13, 2018
In RRAM, an electrical current is typically driven through a memory cell made up of stacked materials creating a change in resistance that records data as 0s and 1s in memory. A material would need to be robust enough for storing and retrieving data at least trillions of times. A team of researchers in the US (Purdue University, NIST, industry) found that in Molybdenum ditelluride when an electric field is applied to the cell, atoms are displaced by a tiny distance resulting in a state of high resistance which can occur much faster than switching in conventional RRAM devices. This property potentially increases the rate of storing and retrieving information…read more.
Researchers have discovered a new functionality in a two-dimensional material that allows data to be stored and retrieved much faster on a computer chip, saving battery life. CREDIT: Purdue University illustration