Nanowerk September 21, 2018
An international team of researchers (Singapore, China) developed multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. It ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 104 s. The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory… read more. Open Access TECHNICAL ARTICLEÂ
Schematic illustration of the optoelectronic memory device fabricated by layering a monolayer WSe2 on a 20-layer BN. (Image: NUS)