Physics World June 18, 2018
An international team of researchers (Germany, Japan, Sweden, South Korea) has discovered a variety of new colour centres in lateral p-i-n diodes made from a polytype (a crystal structure) of silicon carbide called 4H-SiC that contains naturally occurring divacancies. The newly-discovered centres emit non-classical light in the visible and near-infrared range. One type of defect can even be excited using electrical means. This means that it might be integrated into compact electronics devices as there would be no need for an additional bulky laser system to optically excite it. The work opens new directions both for device engineering and for basic physics studies…read more. Open Source TECHNICAL ARTICLE
Credit: Matthias Widmann, University of Stuttgart