Phys.org  September 4, 2024 Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials requires new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. An international team of researchers (Australia, USA – CUNY-The City College of New York) combined charge-state sensitive optical microscopy with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device. […]