A new ultra-thin electrode material: A step closer to next-generation semiconductors

Nanowerk  May 30, 2022 To overcome the limitations of processing costs, power consumption and integration of miniaturizing silicon-based logic devices, studies are being conducted on electronic and logic devices based on very thin two-dimensional semiconductors at an atomic layer level. An international team of researchers (South Korea, Japan) were able to selectively control the electrical properties of semiconductor electronic devices using Cl-doped tin diselenide (Cl-SnSe2). They were able to freely control the characteristics of the N-type and P-type devices by minimizing defects with the semiconductor interface. In other words, a single device could perform the functions of both N-type and […]