Phys.org December 1, 2021 An international team of researchers (USA – UC Berkeley, Japan) believe that to surpasses the limits of Moore’s Law magnons can be harnessed to carry information. Since the electrons themselves remain stationary as magnons pass through them, there is no heat to be dissipated, the major limiting factor in Moore’s Law. Magnons carry spins faster and with lower heat dissipation than electrons. They are starting with heterostructures of Mott insulators and heavy metals that will enable them to add and remove spin in the Mott insulator. They are fabricating a prototype Topological Magnon Transistor (TMT) in […]
Tag Archives: Topological transistor
Topological matters: Toward a new kind of transistor
Phys.org December 10, 2018 An international team of researchers (Australia, Singapore, USA – Lawrence Berkeley National Laboratory, University of Illinois at Urbana – Champaign) has demonstrated electronic switching in ultrathin sodium bismuthide (Na3Bi), a topological Dirac semimetal that can carry a charge with nearly zero loss at room temperature. They demonstrated switching by subjecting the material to a low-current electric field. They found a way to grow it extremely thin, down to a single layer arranged in a honeycomb pattern of sodium and bismuth atoms, and to control the thickness of each layer they create. Topological transistors that could have […]