Science Daily  January 31, 2024 Although fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. A team of researchers in the US (UC Irvine, Los Alamos National Laboratory, University of Tennessee) applied significant and controllable strain to high-quality HfTe5 samples and performed electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying […]