Phys.org  March 1, 2022 An international team of researchers (USA – PNNL, UT Arlington) tested germanium in combination with a specialized thin crystalline film of lanthanum-strontium-zirconium-titanium-oxide (LSZTO) using hard X-ray photoelectron spectroscopy which can penetrate the material and generate information at the atomic level. They found that the oxygen atoms near the interface donate electrons to the LSZTO film, creating holes in the germanium within a few atomic layers of the interface. These specialized holes resulted in behavior that totally eclipsed the semiconducting properties of both n- and p-type germanium in the different samples they prepared. According to the researchers […]