Nanowerk July 9, 2021 A team of researchers in the US (UCLA, UC Irvine) explored the interface energy transport in semiconductor materials with high thermal conductivity, including boron arsenide (BAs) and boron phosphide (BP). They showed that BAs and BP cooling substrates can be heterogeneously integrated with metals, a wide-bandgap semiconductor (gallium nitride, GaN) and high-electron-mobility transistor devices. GaN-on-BAs structures exhibit a high thermal boundary conductance of 250 MW m−2 K−1, and comparison of device-level hot-spot temperatures with length-dependent scaling (from 100 μm to 100 nm) shows that the power cooling performance of BAs exceeds that of reported diamond devices. Operating AlGaN/GaN high-electron-mobility transistors with […]
Tag Archives: Thermal cooling
In the future, this electricity-free tech could help cool buildings in metropolitan areas
EurekAlert August 5, 2019 An international team of researchers (University of Buffalo, University of Wisconsin, Saudi Arabia, China) fabricated an inexpensive planar polydimethylsiloxane (PDMS)/metal thermal emitter thin film structure using a fast solution coating process that is scalable for large-area manufacturing. The spectral-selective structure was designed and implemented to suppress the solar input and control the divergence of the thermal emission beam enhancing the directionality of the thermal emissions, so the emitter’s cooling performance was less dependent on the surrounding environment. In tests under different environmental conditions, temperature reductions of 9.5 °C and 11.0 °C in the laboratory and outside environment, respectively, […]