Science Daily October 30, 2021 Strain engineering is a powerful tool in designing artificial platforms for high-temperature excitonic quantum devices. An international team of researchers (USA – City College of New York, Germany, Japan) has created excitonic wires, essentially one-dimensional channels for excitons in what is otherwise a two-dimensional semiconductor by depositing the atomically thin 2D crystal on top of a microscopically small wire they created a small, elongated dent in the two-dimensional material, slightly pulling apart the atoms in the two-dimensional crystal and inducing strain in the material. For excitons, this dent is much like a pipe and once trapped […]
Tag Archives: Strain engineering
Bending an organic semiconductor can boost electrical flow
Science Daily December 3, 2019 Slightly bending semiconductors made of organic materials can roughly double the speed of electricity flowing through them. An international team of researchers (USA – Rutgers University, UMass Amherst, Japan, South Korea) shows a very strong, anisotropic, and reversible modulation of the intrinsic (trap‐free) charge carrier mobility of single‐crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier […]