Phys. org November 6, 2024 Room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe3GaTe2 (FGaT), has garnered significant interest as a robust platform for 2D spintronic applications. Although many fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. An international team of researchers (Republic of Korea, USA – Lawrence Berkeley National Laboratory) showed the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy using a mechanism based […]
Tag Archives: Spintronics
New light-induced material shows powerful potential for quantum applications
Phys.org October 15, 2024 By using semiconducting hybrid perovskite as an exploratory platform, a team of researchers in the US (Northern Illinois University, Argonne National Laboratory) discovered that Nd2+ doped CH3NH3PbI3 (MAPbI3) perovskite exhibited a Kondo-like exciton-spin interaction under cryogenic and photoexcitation conditions. From a mechanistic standpoint, such extended charge separation states are the consequence of the trap state enabled by the antiferromagnetic exchange interaction between the light-induced exciton and the localized 4 f spins of the Nd2+ in the proximity. Importantly, this Kondo-like exciton-spin interaction can be modulated leading to exciton recombination at the dynamics comparable to pristine MAPbI3… read […]
Scientists develop the next generation of highly efficient memory materials with atom-level control
Phys.org June 27, 2024 Recently a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact spin–orbit torque (SOT) systems. Researchers in South Korea demonstrated external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3 by delicately altering the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This led to unbalanced spin Hall effects between the top and bottom layers. SrRuO3 exhibited the highest SOT efficiency and lowest power […]
Heat used to transform antiskyrmions to skyrmions and back
Riken Research June 19, 2024 Recent studies have experimentally discovered several host materials for antiskyrmions have been identified, but their control via thermal current remains elusive. An international team of researchers (Japan, Germany) used thermal current to drive the transformation between skyrmions, antiskyrmions and non-topological bubbles, as well as the switching of helical states in the antiskyrmion-hosting ferromagnet (Fe0.63Ni0.3Pd0.07)3P at room temperature. They discovered that a temperature gradient drove a transformation from antiskyrmions to non-topological bubbles to skyrmions while under a magnetic field and observed the opposite, unidirectional transformation from skyrmions to antiskyrmions at zero-field, suggesting that the antiskyrmion, more […]
Researchers make a surprising discovery: Magnetism in a common material for microelectronics
Phys.org May 15, 2024 Nickel monosilicide (NiSi) is widely used to connect transistors in semiconductor circuits. Earlier theoretical calculations had incorrectly predicted that NiSi was not magnetic. As a result, researchers had never fully explored magnetism in NiSi. An international team of researchers (USA – University of Missouri, Oak Ridge National Laboratory, Austria, Poland) showed that NiSi metal could provide suitable new platform. The study showed high-temperature antiferromagnetism in single-crystal NiSi with Néel temperature. Antiferromagnetic order in NiSi was accompanied by non-centrosymmetric magnetic character with small ferromagnetic component in the a–c plane. It was found that NiSi manifests distinct magnetic […]
Altermagnetism: A new type of magnetism, with broad implications for technology and research
Phys.org February 14, 2024 Altermagnets have a special combination of the arrangement of spins and crystal symmetries. The spins alternate, as in antiferromagnets, resulting in no net magnetization. Rather than simply canceling out, the symmetries give an electronic band structure with strong spin polarization that flips in direction as you pass through the material’s energy bands resulting in highly useful properties more resemblant to ferromagnets, as well as some completely new properties. An international team of researchers (Switzerland, Germany, Czech Republic, Austria, Colombia, UK) has proved the existence of altermagnetism. They provided the confirmation using photoemission spectroscopy and ab initio […]
Controlling waves in magnets with superconductors for the first time
Science Daily October 26, 2023 For spintronics spin-waves have emerged as a promising platform that can offer new functionalities because of their wave nature. However, control of the spin-waves has remained a formidable challenge. Researchers in the Netherlands used superconducting diamagnetism to shape the magnetic environment governing the transport of spin waves in a thin-film magnet. Using diamond-based magnetic imaging, they observed hybridized spin-wave–Meissner-current transport modes with strongly altered, temperature-tunable wavelengths and then demonstrated local control of spin-wave refraction using a focused laser. According to the researchers their results demonstrate the versatility of superconductor-manipulated spin-wave transport and have potential applications […]
Researchers demonstrate solution for long-term challenge, bringing benefits to spintronics and data storage technologies
Phys.org October 30, 2023 Transition-metal oxides (TMOs) with strong ferrimagnetism provide new platforms for tailoring the anomalous Hall effect (AHE) beyond conventional concepts based on ferromagnets, and particularly TMOs with perpendicular magnetic anisotropy (PMA) are of prime importance for today’s spintronics. In this study researchers in Germany reported on transport phenomena and magnetic characteristics of the ferrimagnetic TMO NiCo2O4 (NCO) exhibiting PMA. The entire electrical and magnetic properties of NCO films were strongly correlated with their conductivities governed by the cation valence states. The AHE exhibited an unusual sign reversal resulting from a competition between intrinsic and extrinsic mechanisms depending […]
New material could hold key to reducing energy consumption in computers and electronics
Nanowerk July 13, 2023 Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and host to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Researchers at the University of Minnesota fabricated highly ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presented surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. They attributed the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable […]
Hydrogen-tuned topological insulators may lead to new platforms in sustainable quantum electronics
Phys.org May 4, 2022 An international team of researchers (USA – City College of New York, Virginia Tech, Oak Ridge National Laboratory, City University of New York, Poland) invented a new facile and powerful technique that uses ionic hydrogen to reduce charge carrier density in the bulk of 3D topological insulators and magnets. It made robust non-dissipative surface or edge quantum conduction channels accessible for manipulation and control. Hydrogen-tuning technique of chalcogen-based topological materials and nanostructures uses insertion and extraction of ionic hydrogen from dilute aqueous hydrochloric acid solution, which leaves the layered topological crystal structure as well as electronic […]