Phys.org  July 25, 2024 Current efforts to enable a broader range of optoelectronic functionality are limited because of inherent inefficiencies associated with spin injection across semiconductor interfaces. An international team of researchers (USA – National Renewable Energy Laboratory (NREL), University of Utah, Colorado School of Mines, University of Colorado, France) demonstrated spin injection across chiral halide perovskite/III–V interfaces achieving spin accumulation in a standard semiconductor III–V (AlxGa1−x)0.5In0.5P multiple quantum well light-emitting diode. The spin accumulation was detected through emission of circularly polarized light with a degree of polarization of up to 15 ± 4%. The chiral perovskite/III–V interface characterized with X-ray photoelectron […]