Nanowerk  December 2, 2024 Researchers in South Korea developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. The method involved the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films had an amorphous structure, a higher proportion of oxygen corresponding to the oxide network, which contributed to the low leakage current and frequency-independent dielectric properties. The zirconium dioxide TFTs fabricated on flexible substrates exhibited excellent electrical characteristics, field-effect mobility, subthreshold swing, and an on/off current ratio of 1.13 × 106 at […]