Phys.org  June 28, 2024 To produce 75 °C continuous-wave operation research in South Korea investigated InAs/GaAs quantum dot laser diodes (QDLDs) on a GaAs substrate grown by utilizing all-metalorganic chemical vapor deposition technology with a p-AlGaAs cladding layer. The InAs quantum dots (QDs) in a dot-in-a-well (DWELL) structure formed by engineering the strained bottom InGaAs layer were successfully grown without detectable clusters, making it possible to increase the number of DWELL stacks effectively. The results of electron-channeling contrast imaging revealed that dislocations in the p-cladding layer were generated due to the accumulative strain of the DWELL and low-temperature growth. The […]