Nanowerk  July 10, 2023 Phase change memory could potentially revolutionize data storage because of its high storage density, and faster read and write capabilities. But still, the complex switching mechanism and intricate fabrication methods associated with these materials have posed challenges for mass production. Unlike conventional amorphous-crystalline PCMs, NbTe4 demonstrates both a low melting point and a high crystallization temperature. This unique combination offers reduced reset energies and improved thermal stability at the amorphous phase. Researchers in Japan fabricated NbTe4 and evaluated its switching performance. It exhibited a significant reduction in operation energy compared to conventional phase-change memory compounds. The […]