Scientists develop the next generation of highly efficient memory materials with atom-level control

Phys.org  June 27, 2024 Recently a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact spin–orbit torque (SOT) systems. Researchers in South Korea demonstrated external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3 by delicately altering the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This led to unbalanced spin Hall effects between the top and bottom layers. SrRuO3 exhibited the highest SOT efficiency and lowest power […]