Science Daily  November 8, 2022 The compound semiconductor silicon-germanium has decisive advantages over today’s silicon technology in terms of energy efficiency and achievable clock frequencies. But establishing contacts between metal and semiconductor on a nanoscale in a reliable way is the main problem with a high proportion of germanium than with silicon. An international team of researchers (Austria, Switzerland, France) found a method to create perfect interfaces between aluminium contacts and silicon germanium components on an atomic scale. They produced a thin silicon layer and the silicon-germanium. By heating the structure in a controlled manner a contact was created between […]