Science Daily  February 13, 2023 In nanoelectronics charged domain walls, especially in ferroelectric structures, serve as an active element. The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. An international team of researchers (China, Singapore, USA – University of Nebraska, South Dakota School of Mines and Technology) developed and demonstrated a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in-situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism was […]